1 publication order number : nddp010n25az/d ? semiconductor component s industries, llc, 2014 november 2014 - rev. 2 www.onsemi.com nddp010n25az features ? high speed switching ? low gate charge ? esd diode-protected gate ? 100% avalanche tested ? pb-free, halogen free and rohs compliance specifications absolute maximum ratings at ta = 25 ? c parameter symbol value unit drain to source voltage v dss 250 v gate to source voltage v gss ? 30 v drain current (dc) i d 10 a drain current (pulse) pw ? 10 ? s, duty cycle ? 1% i dp 40 a power dissipation tc=25 ? c p d 1 w 52 junction temperature tj 150 ? c storage temperature tstg ? 55 to +150 ? c source current (body diode) i s 10 a avalanche energy (single pulse) * 1 e as 15.5 mj lead temperature for soldering purposes, 3mm from case for 10 seconds t l 260 ? c thermal resistance ratings parameter symbol value unit junction to case steady state r ? jc 2.40 ? c/w junction to ambient * 2 r ? ja 125 note : * 1 v dd =50v, l=1mh, i av =5a (fig.1) * 2 insertion mounted ordering & package information device package shipping memo nddp010n25azt4h dpak(tp-fa), sc-63, to-252 700pcs. / reel pb-free and halogen free NDDP010N25AZ-1H ipak(tp), sc-64, to-251 500pcs. / bag power mosfet 250v, 10a, 420m ? , n-channel stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should n ot be assumed, damage may occur and reliability may be affected. electrical connection 1. gate 2. drain 3. source 4. drain 1 3 2 ,4 packing type:tl marking tl 10n25 az lot no. dpak 1 2 3 4 ipak 1 2 3 4
nddp010n25az www.onsemi.com 2 electrical characteristics at ta ? 25 ? c parameter symbol conditions value unit min typ max drain to source breakdown voltage v( br ) dss i d =1ma, v gs =0v 250 v zero-gate voltage drain current i dss v ds =250v, v gs =0v 1 ? a gate to source leakage current i gss v gs =24v, v ds =0v ? 10 ? a gate threshold voltage v gs (th) v ds =10v, i d =1ma 2.5 4.5 v forward transconductance g fs v ds =10v, i d =5a 6.5 s static drain to source on-state resistance r ds (on) i d =5a, v gs =10v 320 420 m ? input capacitance ciss v ds =20v, f=1mhz 980 pf output capacitance coss 80 pf reverse transfer capacitance crss 25 pf turn-on delay time t d (on) see fig.2 18 ns rise time t r 26 ns turn-off delay time t d (off) 44 ns fall time t f 31 ns total gate charge qg v ds =125v, v gs =10v, i d =10a 16 nc gate to source charge qgs 4.7 nc gate to drain ?miller? charge qgd 4.6 nc forward diode voltage v sd i s =10a, v gs =0v 0.96 1.2 v reverse recovery time t rr see fig.3 130 ns reverse recovery charge q rr i s =10a, v gs =0v, di/dt=100a/ ? s 540 nc fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit fig.3 reverse recovery time test circuit product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product per formance may not be indicated by the electrical characteristics if operated under different conditions.
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nddp010n25az www.onsemi.com 5 package dimensions nddp010n25azt4h dpak / tp-fa unit : mm 1:gate 2:drain 3:source 4:drain recommended soldering footprint 7.0 1.5 2.3 2.0 2.5 2.3 7.0
nddp010n25az www.onsemi.com 6 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc) or its subsidiaries in the united st ates and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a lis ting of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . scillc reserves the right to make changes with out further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any parti cular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specific ations can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated fo r each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc pro ducts are not designed, intended, or authorized for use as com ponents in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees ar ising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that sci llc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject t oall applicable copyright laws and is not for resale in any manner. package dimensions NDDP010N25AZ-1H ipak / tp unit : mm 1:gate 2:drain 3:source 4:drain note on usage : since the nddp010n25az is a mosfet product , please avoid using this device in the vicinity of highly charged objects.
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